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The use of gallium nitride (GaN) high-electron mobility transistors (HEMTs) is a promising solution for a highly efficient motor drive design due to their high-switching speed and low on-state resistance. However, the higher reverse voltage drop of GaN HEMTs than that of the conventional silicon (Si) devices generates significant reverse conduction loss during the freewheeling period. This phenomenon...
This paper proposes a novel reference voltage controlled pulse width modulation technique to minimize the excitation torque ripple of a single-phase brushless DC motor for high-speed applications. The proposed control technique reduces output current ripple by modifying PWM reference voltage rather than shifting input voltage phase. The comparison results of output torque indicate that the proposed...
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