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The use of gallium nitride (GaN) high-electron mobility transistors (HEMTs) is a promising solution for a highly efficient motor drive design due to their high-switching speed and low on-state resistance. However, the higher reverse voltage drop of GaN HEMTs than that of the conventional silicon (Si) devices generates significant reverse conduction loss during the freewheeling period. This phenomenon...
Due to low loss and fast switching capabilities of gallium nitride (GaN) based power devices; there has been a strong interest in the replacement of silicon (Si) devices in power electronics converters for various applications. However, one of the concerns is that the high switching speed (dv/dt and di/dt) of GaN devices will deteriorate the EMI emission of power converters. Hence, this paper studies...
GaN power switching devices are promising candidates for high switching frequency and high efficiency operations due to their lower on-resistance and faster switching capabilities compared to conventional silicon power devices. As the switching frequency increases up to the MHz-level, soft switching plays an important role to further minimize the switching losses and improve the efficiency. In this...
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