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SiC power devices have very promising future because their ultra low conduction and switching losses and ability of working at high temperatures. SiC MOSFET not only has very low switching loss but also shows no degradation in Rdson at 150??C. In order to achieve ultra low switching loss for SiC BJT, a new drive method is proposed and implemented. These characteristics make SiC power MOSFET/BJT devices...
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