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4H–SiC BJTs with a common emitter current gain of 110 have been demonstrated. The high current gain was attributed to a thin base of 0.25μm which reduces the carrier recombination in the base region. The device open base breakdown voltage (BV CEO ) of 270V was much less than the open emitter breakdown voltage (BV CBO ) of 1560V due to the emitter leakage current multiplication from...
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