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We compare the performance of static random access memory (SRAM) cells based on negative capacitance (NC) FinFETs and reference FinFETs at the 7-nm technology node. We use a physics-based model for NC FinFETswhere we couple the Landau–Khalatnikovmodel of ferroelectric materials with the standard BSIM-CMG model of FinFET. For the reference FinFETs, we use the predictive model parameters optimized for...
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