The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
Cu diffusion in the spin-on hydrogen silsesquioxane (HSQ) is a major obstacle in the low-k plus Cu technology for future ULSI devices. We have optimized the process conditions for the spin-on HSQ low-k films. Subsequent metallization with Al and Cu shows a higher leakage current for Cu contact. We have employed Cat-CVD to deposit a-SiC:H films of different thickness on HSQ and studied their effect...
Spin on hydrogen silsesquioxane (HSQ) is a material with low dielectric constant (k) and shows potential as intermetal dielectric (IMD) layers for future VLSI circuits. One major challenge in the integration of these films is the moisture uptake with time, which degrades the electrical performance and hence limits their application. In the present work, we show (under accelerated conditions) that...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.