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Black phosphorus (BP), owing to its direct bandgap, has become one of the most competitive candidate for photodetectors. In this report, the I-V characteristics of BP field-effect transistors (FETs) is measured for the first time. The photo-response time (including both the rise and fall time) of multilayer black phosphorus photodetectors is then explored and the feature of photocurrent signals is...
Nano-optoelectronic sensors and devices bring tremendous revolutions in photoelectric conversion due to dimension reduced. The device geometry dominates the electron transport so that the spatially resolved optoelectronics properties are critical to characterize device performance. In this paper, it reports a two-photon pulsed laser scanning microscopy method which utilizes raster scan on device with...
The conventional infrared sensors suffer from trade off between sensitivity and cost. The bolometer infrared camera is low resolution and slow speed while the quantum photodetectors are bulky and expensive. In this paper, the novel low dimensional materials carbon nanotube based Schottky barrier structure non cryogenic IR detector was proposed to detect IR irradiance. In order to characterize the...
Infrared (IR) sensors have been widely used for military and civil industry, while carbon nanotube (CNT) research progresses have been made in recent years. This led to investigation and development of CNT based IR detectors. In this paper, CNT-metal based Schottky barrier structure was designed to detect IR irradiance, and different interfacial layer, including SiO2, parylene-C, Si3N4, quartz, and...
High-performance quatum infrared cameras are substantially
expensive and complicated in comparison to general visible light cameras.
Producing a high-resolution infrared camera is especially difficult due to the lack of
suitable photon absorption materials in the infrared spectrum and various challenges
involved in design, manufacturing, and characterization. Graphene, a novel oneatomic-
layer-thick...
We report a strong electron-photon interaction in exfoliated graphene observed at room temperature. Graphene has great potential to optoelectronic applications because of its excellent optical properties. Here, we demonstrate using the graphene-based structure for infrared detection under a zero-bias operation. When infrared light is projected to graphene, the graphene is capable to generate photocurrents...
Researchers have been looking for novel materials to improve the performance of photonic devices. Graphene has great potential to optoelectronic applications because of its excellent optical properties. Here, we demonstrate using the graphene-based photodetectors for infrared detection under a zero-bias operation. We have demonstrated to use an electric-field-assisted method to manipulate graphene...
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