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Memristive devices are among the most prominent candidates for future computer memory storage and neuromorphic computing. Though promising, the major hurdle for their industrial fabrication is their device‐to‐device and cycle‐to‐cycle variability. These occur due to the random nature of nanoionic conductive filaments, whose rupture and formation govern device operation. Changes in filament location,...
Strongly correlated perovskite oxides are a class of materials with fascinating intrinsic physical functionalities due to the interplay of charge, spin, orbital ordering, and lattice degrees of freedom. Among the exotic phenomena arising from such an interplay, metal–insulator transitions (MITs) are fundamentally still not fully understood and are of large interest for novel nanoelectronics applications,...
In recent years Resistive Random Access Memory (RRAM) is emerging as the most promising candidate to substitute the present Flash Technology in the non-volatile memory market. RRAM are based on the Resistive Switching (RS) effect, where a change in the resistance of the material can be reversibly induced upon the application of an electric field. In this sense, strongly correlated complex oxides present...
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