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We present direct bandgap photoluminescence from carrier confinement in Ge/SiGe quantum wells in a microdisk resonator. Based on simulation and experimental results, the Ge/SiGe quantum well structure has great potential to serve as a low pump power Ge laser.
We present the Ge/SiGe quantum well structure as a candidate for CMOS compatible light source. Thermal enhancement of electroluminescence from temperature dependent measurements agree with theory and indicates promise for an efficient Ge light source.
In this paper, we report the enhanced direct band gap photoluminescence from carrier confinement in Ge quantum wells with SiGe barriers at room temperature. We have also fabricated a microdisk resonator and present the tapered-fiber coupled high-Q cavity mode from Ge quantum wells.
We present the Ge/SiGe quantum well structure as a strong candidate for CMOS compatible light source. Photoluminescence and electroluminescence show enhanced optical properties over bulk Ge. Further optical enhancement is observed in disk resonators.
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