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Numerical simulation based on first-principles calculations is applied to study the structural characteristics and band-energy properties of the zincblende In x Ga 1-x N. The deviation parameter of the lattice constant is determined to be -0.004 A. A band gap bowing parameter of 1.890+/-0.097 eV is obtained with the equilibrium lattice constant and 1.857+/-0.093 eV is obtained...
The characteristics of the violet–blue InGaN quantum-well lasers with an emission wavelength of 400–480 nm when the band-offset ratio of the In x Ga 1−x N/In y Ga 1−y N heterojunction is 3/7, which was most frequently used before, and 7/3, which is accepted recently by most researchers, are studied numerically. Specifically, the characteristics of the electronic current...
Summary form only given. An organically-modified silicate (ORMO-SIL) doped with 1,1',3,3,3',3'-hexamethylindotricarbocyanine iodide (HITCI) was shown to function as a saturable absorber Q-switch for a number of near-IR solid-state lasers. The broad absorption (peak near 750 nm) indicates the potential application of this material as a saturable absorber Q-switch for the Cr:LiCAF laser (tunable from...
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