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In order to merge low power and high voltage devices on the same chip at competitive cost, Smart Power integrated circuits (ICs) are extensively used. The presence of low power and high voltage devices in Smart Power ICs cause parasitic substrate interaction between switched power stages and sensitive analog blocks. Nowadays this is the major cause of failure of Smart Power ICs inducing costly circuit...
In order to merge low power and high voltage devices on the same chip at competitive cost, Smart Power integrated circuits (ICs) are extensively used. Electrical noise induced by power stage switching or external disturbances generates parasitic substrate currents, leading to a local shift of the substrate potential which can severely disturb low voltage circuits. Nowadays this is the major cause...
The presence of low power and high voltage devices in Smart Power integrated circuits (ICs) cause parasitic substrate interaction between switched power stages and sensitive analog blocks. This in turn is the major cause of failure of Smart Power ICs, inducing costly circuit redesign. In order to predict these harmful events, there is a need in IC industry to create a link between circuit designs,...
In order to merge low power and high voltage devices on the same chip at competitive cost, Smart Power integrated circuits (ICs) are extensively used. Electrical noise induced by power stage switching or external disturbances generates parasitic substrate currents, leading to a local shift of the substrate potential which can severely disturb low voltage circuits. Nowadays this is the major cause...
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