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An analytical model for high voltage Thin-film Silicon-On-Insulator (TSOI) lateral devices is proposed in this paper. A new Reduced SURface Field (RESURF) criterion is obtained for TSOI lateral devices with a lateral linear doping in the drift region. The optimum drift doping profile for TSOI lateral devices can be obtained from the new RESURF criterion. The analytical results are in good agreement...
A high voltage trench gate MOSFET (TMOS) with an ultra-low specific on-resistance (Ron) is proposed. The MOSFET is characterized by the combination of a trench gate and two buried p-islands (BPIs) formed in the n-epitaxial layer by the self-alignment (BPIs TMOS). In the blocking state, the superjunction structure, formed by the BPIs/n-drift region, sustains a higher breakdown voltage (BV). The high...
A new SOI high-voltage power device with a combination of Uniform and Variation in Lateral Doping profiles on Partial Membrane(UVLD PM SOI) is proposed. Its partial substrate under the drift region is etched to release the potential lines below the buried layer, combining uniform and variation in lateral doping profiles, resulting in an enhancement of breakdown voltage while achieving a low specific...
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