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We reported an amorphous InGaZnO thin-film transistor using stacked gate dielectrics of GeO2/TiO2 on flexible polycarbonate substrate. The flexible TFT showed a low threshold voltage of 2.2 V, small sub-threshold swing of 256 mV/decade, an field effect mobility of 4 cm2/Vs, and a good Ion/Ioff ratio of 3.7×105. The flexible TFT with low operation voltage and high drive current could be attributed...
We dissolved hole transport materials α-NPD and NPB in THF solvent, and spin-coated the α-NPD+THF or NPB+THF solution onto ITO anode surface to improve the luminance efficiency and lifetime of flexible fluorescent and phosphorescent organic light emitting diodes. Then the BCP and TPBi were employed as hole blocking layer (HBL) of phosphorescent device and its thickness was optimized. From the experimental...
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