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With silicon carbide (SiC) MOSFETs becoming commercial available, high switching frequency is a prevailing trend to increase the power density and efficiency in power converters. Nevertheless, the device performance is critically determined by the values of parasitic inductances, where negative effects such as switching oscillations are usually presented. It is more likely troublesome for power modules...
This paper discusses a new technique to accurately characterize parasitic inductances of discrete fast switching MOSFETs based on S-parameters measurement using two-port vector network analyzer. The method is validated through case studies of 1200V SiC MOSFET in TO-247 and 30V silicon trench MOSFET in SO-8 package.
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