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To tackle the key issues of monolithic heterogeneous integration, fast yet low power processing, high integration density, fast yet low power storage, the goal of the GREAT project is to co-integrate multiple functions like sensors (“Sensing”), RF receivers (“Communicating”) and logic/memory (“Processing/Storing”) together within CMOS by adapting the STT-MTJs (Magnetic devices) to a single baseline...
This paper deals with a new MRAM technology whose writing scheme relies on the Spin Orbit Torque (SOT). Compared to Spin Transfer Torque (STT) MRAM, it offers a very fast switching, a quasi-infinite endurance and improves the reliability by solving the issue of “read disturb”, thanks to separate reading and writing paths. These properties allow introducing SOT at all-levels of the memory hierarchy...
High write latency and high write energy are the major challenges in Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) design. The write operation in STT-MRAM is of stochastic nature. Therefore, it requires a very long timing margin to maintain an acceptable level of reliability and yield. Traditionally, Error Correction Codes (ECCs) are used to reduce the timing margin in STT-MRAM. However,...
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