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In the 3D integration stages, the structure of the TSV is changed with the development of the procedure. The 3D though silicon via (TSV) integration models with the new updated structure depended on the integration processes (fabricating redistribution layer (RDL), reflowing solders and filling underfill) were analytically studied in this work. The equivalent stress, von Mises stress, was used to...
This work mainly focused on the heat dissipation of the 3D integrated circulates (ICs). In order to satisfy the urgent heat dissipation needs, the optimal design of heat sink and optimized path for transmitting heat is one of the most promising and effective ways. Two methods have been proposed for solving the heat dissipation issues. First one was the optimized microchannel with pin fin integrated...
A novel implantation-free 2-step junction termination extension (2S) with 2 space modulated buffer trench (2SMBT) zones is presented for ultrahigh voltage (>10kV) 4H-SiC gate turn off thyristor (GTO). The systematic studies on the optimization of the structure by Sentaurus TCAD tools were performed. The results show the 2SMBT structure introduced to the conventional 2S can effectively improve the...
The potential of junctionless (JL) FinFETs for low power applications is extensively explored in this work. Firstly, we present the complete potential-based 3-D compact model dedicated to JL FinFETs. Secondly, based on the established model, two type JL FinFETs, with high doped channel (HDJL), and low doped channel (LDJL), are comprehensively compared with inversion-mode (IM) FinFET operating at near...
This paper presents a five-order Butterworth low-pass filter with DC offset cancellation (DCOC) for WLAN Applications in a 65-nm CMOS process. The low-pass filter employs transconductance cell instead of conventional two-stage amplifiers to avoid internal poles which may otherwise cause the reduction of GBW. In order to achieve an appropriate 1-dB bandwidth of the integral filter, extra parasitic...
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