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A 25 Gb/s × 4-channel transimpedance amplifier has been realized in 65-nm CMOS technology. It achieves transimpedance gain of 69.8 dBΩ, bandwidth of 22.8 GHz, and gains flatness of under ±2 dB after equalizing the effect of transmission loss, incorporating gain-stage amplifier with flat frequency response, and 50Ω-output driver with an analogue equalizer. The proposed TIA dissipates only 74 mW/ch...
A 12.3-mW 12.5-Gb/s complete transceiver based on the 65-nm standard digital CMOS process was developed. The chip includes a clock-and-data-recovery (CDR) device, a multiplexer/demultiplexer (MUX/DEMUX), and a global clock-distribution network. To reduce power consumption, a low-swing voltage-mode driver with pulse-current boosting and an LC resonant-clock distribution with distributed on-chip inductors...
We demonstrate a high speed (25-Gb/s) and low power (2.8-mW/Gb/s) operation of a CMOS receiver for 100-Gb/s Ethernet, consisting of a novel transimpedance amplifier based on 65-nm CMOS technology and a back-illuminated PIN-PD.
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