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Randomization of the trap state of defects present at the gate Si-SiO2 interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/${f}$ noise. Random activity of trapping and de-trapping of mobile charge carriers, in to these defects, can be reduced by switching the device ON and OFF periodically. The analysis of the low-frequency noise considers...
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