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Germanium-tin alloy (Ge1−xSnx), due to its direct gap nature for x > 0.08, has higher absorption coefficient than that of pure Ge. Using COMSOL Multiphysics, we have simulated the characteristics of Ge/GeSn/Ge heterojunction phototransistor, the base of which incorporates a multiple quantum well (MQW) structure made of Ge0.87Sn0.13 barrier and Ge0.75Sn0.155 well at a wavelength of 1.55 μm. The...
The performance of proposed surface plasmon resonance based methane gas sensor based on Kretschmann configuration in infrared (IR) is discussed. In this structure, calcium fluoride (CaF2) substrate is considered with gold (Au) layer deposited on its base and methane gas is used as a sensing layer. Performance of sensor is analysed in terms of sensitivity and figure of merit (FOM) with various metal...
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