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This paper reports on the investigation of 1 μm thick films of 20% Scandium-doped Aluminum Nitride (ScAlN) for the making of piezoelectric MEMS laterally vibrating resonators (LVRs). The ScAlN films, which can be sputter-deposited such as undoped Aluminum Nitride (AlN) films, were used to demonstrate high performance resonators. These devices showed quality factor (Qs) in excess of 1000 in air centered...
Lithium niobate (LN) based thin film piezoelectrics have being extensively explored [1-3] for the making of high coupling and high performance resonators. The most important bottleneck for the use of LN film is related to fabrication process and it is particularly challenging when a bottom electrode is included in the stack to increase the film capacitance per unit area. We have explored Y-cut LN...
The most important bottleneck for the use of lithium niobate (LN) films for making MEMS resonators is related to the fabrication process and it is particularly challenging when a bottom electrode needs to be included in the film stack to increase the resonator's capacitance per unit area. In this work, we propose to access the bottom electrode by using capacitive coupling rather than a direct resistive...
RF filtering technologies based on piezoelectric MEMS resonators have been successfully developed and commercialized in the past decade thanks to their size and outstanding performance. The challenge to enhance filter's performance in terms of lower insertion losses and wider bandwidth still makes for an active research topic, especially spurring the interest for new classes of materials such as doped-AlN...
Analog signal processing techniques based on surface acoustic wave (SAW) devices have been commercialized in the past 50 years. Delay lines [1] and resonators [2] have been implemented for a wide range of applications [3]. The use of small scale resonators has boomed because of the continuous growth of the cell phone business, whereas components such as delay lines have been relegated to smaller markets...
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