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This paper reports on the investigation of 1 μm thick films of 20% Scandium-doped Aluminum Nitride (ScAlN) for the making of piezoelectric MEMS laterally vibrating resonators (LVRs). The ScAlN films, which can be sputter-deposited such as undoped Aluminum Nitride (AlN) films, were used to demonstrate high performance resonators. These devices showed quality factor (Qs) in excess of 1000 in air centered...
The most important bottleneck for the use of lithium niobate (LN) films for making MEMS resonators is related to the fabrication process and it is particularly challenging when a bottom electrode needs to be included in the film stack to increase the resonator's capacitance per unit area. In this work, we propose to access the bottom electrode by using capacitive coupling rather than a direct resistive...
RF filtering technologies based on piezoelectric MEMS resonators have been successfully developed and commercialized in the past decade thanks to their size and outstanding performance. The challenge to enhance filter's performance in terms of lower insertion losses and wider bandwidth still makes for an active research topic, especially spurring the interest for new classes of materials such as doped-AlN...
This paper reports the integration of a bottom electrode in thin films of Y-cut lithium niobate (LN) on silicon to demonstrate high performance lamb-wave (S0 mode) and thickness-shear-mode (TSM) resonators. The LN resonator is sandwiched between top and bottom electrodes and attained high coupling (kt2) > 6% when excited in S0 mode and > 30% when excited in TSM. The reported devices possess...
This paper reports finding of directionality in the 44% Scandium doped Aluminum Nitride thin film based surface acoustic wave devices. Some previously reported SAW devices using bulk substrates showed higher power of acoustic signals in either forward or backward direction depending on their crystal orientations and are called natural single-phase unidirectional transducers (NSPUDT). As these reports...
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