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This paper reports on the investigation of 1 μm thick films of 20% Scandium-doped Aluminum Nitride (ScAlN) for the making of piezoelectric MEMS laterally vibrating resonators (LVRs). The ScAlN films, which can be sputter-deposited such as undoped Aluminum Nitride (AlN) films, were used to demonstrate high performance resonators. These devices showed quality factor (Qs) in excess of 1000 in air centered...
RF filtering technologies based on piezoelectric MEMS resonators have been successfully developed and commercialized in the past decade thanks to their size and outstanding performance. The challenge to enhance filter's performance in terms of lower insertion losses and wider bandwidth still makes for an active research topic, especially spurring the interest for new classes of materials such as doped-AlN...
An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transfer high resistivity Si film onto a CMOS chip. Benzocyclobutene (BCB) is used as an adhesive film. It is a heat resistive polymer and processes of temperature up to 300 °C are allowed on it. The CMOS is protected...
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