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This paper reports on the investigation of 1 μm thick films of 20% Scandium-doped Aluminum Nitride (ScAlN) for the making of piezoelectric MEMS laterally vibrating resonators (LVRs). The ScAlN films, which can be sputter-deposited such as undoped Aluminum Nitride (AlN) films, were used to demonstrate high performance resonators. These devices showed quality factor (Qs) in excess of 1000 in air centered...
Lithium niobate (LN) based thin film piezoelectrics have being extensively explored [1-3] for the making of high coupling and high performance resonators. The most important bottleneck for the use of LN film is related to fabrication process and it is particularly challenging when a bottom electrode is included in the stack to increase the film capacitance per unit area. We have explored Y-cut LN...
The most important bottleneck for the use of lithium niobate (LN) films for making MEMS resonators is related to the fabrication process and it is particularly challenging when a bottom electrode needs to be included in the film stack to increase the resonator's capacitance per unit area. In this work, we propose to access the bottom electrode by using capacitive coupling rather than a direct resistive...
This paper reports the integration of a bottom electrode in thin films of Y-cut lithium niobate (LN) on silicon to demonstrate high performance lamb-wave (S0 mode) and thickness-shear-mode (TSM) resonators. The LN resonator is sandwiched between top and bottom electrodes and attained high coupling (kt2) > 6% when excited in S0 mode and > 30% when excited in TSM. The reported devices possess...
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