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This paper presents a high-frequency high-efficiency GaN device-based interleaved critical current mode (CRM) bidirectional buck/boost converter with an inverse coupled inductor. The switching frequency is continually driven to megahertz range with GaN devices due to their small switching loss and driving loss, which greatly reduces the size of the passive components. The coupled inductor further...
Synchronous rectifier (SR) is widely used in flyback converter to reduce the output side conduction loss in order to meet the system conversion efficiency requirement. The conventional SR driving methods are not suitable for high frequency (>500kHz) application. This paper proposes a novel SR driving method for MHz flyback converter operating at critical conduction mode (CRM). A RC network is in...
This paper presents the design consideration and performance evaluation of gallium nitride (GaN) high electron mobility transistor (HEMT) based dual-phase interleaved MHz critical conduction mode (CRM) power factor correction (PFC) converter. A 1.2kW 1–3MHz interleaved boost PFC converter prototype is built with 97.9% peak efficiency and 120W/in3 power density. The significant impact of MHz frequency...
This paper presents the evaluation of high-voltage cascode gallium nitride (GaN) high-electron-mobility transistors (HEMT) in different packages. The high-voltage cascode GaN HEMT in traditional package has high turn-on loss in hard-switching turn-on condition, and severe internal parasitic ringing, which could possibly damage the gate of GaN HEMT, in hard-switching turn-off condition, due to package...
This paper proposes a family of simple, precise and lossless current balancing methods based on charge balancing for multi-output LED strings application. A capacitor is in series with the transformer secondary side to block the output DC voltage difference, and the output current balancing can be achieved by capacitor charge balancing. Compared to the conventional active current sharing technique...
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