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In this work, a novel architecture with stacked-type CMOS device is presented. The reformed CMOS switch was implemented by the TSMC 0.18 um 1P6M standard CMOS process. In order to improve power handling capability and strengthen the isolation, the proposed circuit is inserted with an excess transistor adjacent to the receiver side. The insertion loss of the designed CMOS T/R switch is about 1.9plusmn0...
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