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The influence of various geometry sizes of SiGe HBTs on noise performance of the monolithic Low noise amplifiers(LNAs) is investigated in this paper. Four types of LNAs using SiGe HBTs with different emitter widths, emitter lengths and emitter strip numbers are fabricated in a 0.35-??m Si BiCMOS process technology. The die areas are only 0.2 mm2 due to the absence of inductors. The noise figure(NF),...
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