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In order to weaken the lattice self-heating effect of strained-Si HBT with vertical substrate, a trapezoid Ge doping profile in base is proposed and the device model is established with SILVACO TCAD. It is shown that temperature coefficient of the device is decreased, which is benefit for high power application, at the expense of the decrease of the current gain. Therefore, a further design of superjunction...
In this paper, based on small signal models of hetero-junction bipolar transistors (HBTs) with different feedback circuits, the expressions for S parameters of the device are derived to analyze the influence of different feedback technologies on amplifier performance, especially on the stability and the gain flatness of Ultra-Wideband Low Noise Amplifier(UWB LNA). When a serial inductor or a parallel...
The influence of various geometry sizes of SiGe HBTs on noise performance of the monolithic Low noise amplifiers(LNAs) is investigated in this paper. Four types of LNAs using SiGe HBTs with different emitter widths, emitter lengths and emitter strip numbers are fabricated in a 0.35-??m Si BiCMOS process technology. The die areas are only 0.2 mm2 due to the absence of inductors. The noise figure(NF),...
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