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The theory presented indicates that when the active region of a semiconductor laser is very thin the linewidth enhancement factor differs significantly from Henry's 1 + ?2 factor and can be reduced by a factor of 4. Petermann's K-factor may also play a role in the plane perpendicular to the junction.
We give an argument suggesting that spontaneous emission in gain-guided laser amplifiers is enhanced by a factor much smaller than the K-factor previously calculated. This is because the fundamental mode content of the spontaneous emission field should be calculated in the sense of the Hermitian rather than direct product at the laser output.
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