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In this work we present a phenomenological model for synaptic plasticity suitable to describe common plasticity measurements of memristive devices. We show evidence that the presented model is basically compatible with advanced biophysical plasticity models, which account for a large body of experimental data on spike-timing-depending plasticity (STDP) as an asymmetric form of Hebbian learning. The...
Essential needs of individual memristive devices for neuromorphic circuits are defined and discussed. In more detail, memristive devices based on ionic and purely electronic mechanism are explored. The ionic devices consist of the layer sequence metal/isolator/metal and represent the currently most popular devices. The electronic device is a MemFlash-cell. The MemFlash-cell is based on a conventional...
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