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We experimentally demonstrate highly efficient light-trapping structures that is achieved by breaking the symmetry in inverted nanopyramids on c-Si. The fabrication of these structures is cost-effective and scalable. Our optical measurement for the structures on 10-μm-thick c-Si cells shows the Shockley-Queisser efficiency of 27.9%. We further fabricate plasmonic metal structures on the symmetry-breaking...
Negative capacitance FETs (NCFETs) [1, 2] have garnered an immense interest due to the possibility of achieving sub-60mV/decade sub-threshold swing at room temperature. NCFETs employ a ferroelectric (FE) material in the gate stack (Fig. 1) and utilize the negative capacitance associated with the FE to generate a voltage step up at the gate terminal, thereby achieving steep switching. In this work,...
We introduce a manufacturable method to break the symmetry in inverted nanopyramids on c-Si. This method broadly enhances light trapping and would increase the efficiency from 25 to 26.4% for thick c-Si cells. We further use the nanopyramids as a template to deposit plasmonic metal structures and demonstrate enhanced light absorption in organic solar cells. The enhancement exceeds 100% in some cases...
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