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Metal-Oxide-Silicon (MOS) structures containing silicon nanoparticles (SiNPs) in three different gate dielectrics, single SiO x layer (c-Si/SiNPs-SiO x ), two-region (c-Si/thermal SiO x /SiNPs-SiO x ) or three-region (c-Si/thermal SiO 2 /SiNPs-SiO x /SiO 2 ) oxides, were prepared on n-type (100) c-Si wafers. The silicon nanoparticles were grown...
SiO x thin films with various oxygen contents (1.1=<x=<1.7) have been prepared by thermal evaporation of silicon monoxide in vacuum. The film composition is controlled by changing both deposition rate (between 0.2 and 6nm/s) and depositing the films at two different residual pressures, (2x10 -4 or 1x10 -3 Pa). Long-term stability of all films is ensured by a...
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