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This paper investigates the electromigration induced hillock generation in a wafer level interconnect structure through a numerical approach. The driving force for electromigrationinduced failure includes the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient, which were neglected in many of the existing studies on electromigration. The parameter study...
This paper investigates the electromigration induced hillock generation in a wafer level interconnect structure through numerical approach. The electronic migration formulation that considers the effects of the electron wind force, stress gradients, temperature gradients, as well as the atomic density gradient has been developed. The parameter study for the Al line geometry with different width and...
This paper proposes a new prediction method for electromigration induced void generation of solder bumps in a wafer level chip scale package (WL-CSP). The methodology is developed based on discretized residual weight method (RWM) in a user-defined finite element analysis (FEA) framework to solve the local electromigration governing equation with the variable of atomic concentration. The local solution...
This paper studies the numerical simulation method for electromigration void incubation and afterwards void propagation based on commercial software ANSYS Multi-physics and FORTRAN code. The electronic migration formulation considering the effects of the electron wind force, stress gradients, temperature gradients, as well as the atomic concentration gradient has been developed for the electromigration...
An enhanced finite element modeling methodology based on commercial software ANSYS Multi-physics and FORTRAN code is developed for the simulation of electromigration. The electronic migration formulation taking into account the effects of the atomic concentration gradient (ACG) has been developed to show the difference in the electromigration (EM) failure mechanisms. An improved algorithm of total...
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