The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
The use of gallium nitride (GaN) high-electron mobility transistors (HEMTs) is a promising solution for a highly efficient motor drive design due to their high-switching speed and low on-state resistance. However, the higher reverse voltage drop of GaN HEMTs than that of the conventional silicon (Si) devices generates significant reverse conduction loss during the freewheeling period. This phenomenon...
Silicon carbide (SiC) based devices are known to outperform Si devices in many aspects, such as lower power dissipation, higher operating temperatures, and higher switching frequencies. SiC devices will benefit hybrid vehicles when applied into the DC-DC converters and inverters as part of the electrical power conversion needed to drive the powertrain. Nevertheless, SiC devices can suffer from oscillations...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.