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This paper introduces a new concept of common mode voltage cancellation for pulse width modulated motor drives, aiming at solving issues such as ground leakage current, common mode electromagnetic interference, and bearing current. The balanced inverter topology and dual-winding stator configuration are proposed as a practical realization. Implementation considerations on the influence of circuit...
The use of gallium nitride (GaN) high-electron mobility transistors (HEMTs) is a promising solution for a highly efficient motor drive design due to their high-switching speed and low on-state resistance. However, the higher reverse voltage drop of GaN HEMTs than that of the conventional silicon (Si) devices generates significant reverse conduction loss during the freewheeling period. This phenomenon...
An integration of an electric motor and a drive with wide bandgap (WBG) devices possesses numerous attractive features for electrified and decentralized actuation systems. The WBG devices are capable of operating at high junction temperature (>170 °C) with improved efficiency due to fast switching speed and low on-state resistance. It also leads to better performance and higher power density electro-hydrostatic...
The adoption of silicon carbide (SiC) MOSFETs in variable speed motor drives makes it possible to increase the inverter switching frequency up to several hundred kilohertz without incurring excessive inverter loss. As a result, the harmonic currents and related losses in the machine can be significantly reduced, and the dynamic performance of motor will also be improved. However, the increased switching...
It is a well-known fact that wide-bandgap (WBG) materials such as gallium nitride (GaN) and silicon carbide (SiC) have superior characteristics compared to silicon (Si) in power electronics and motor drive applications. Performance of a single-phase brushless high-speed DC motor can be improved by using GaN-based drive since it requires high frequency operation and low conduction and switching losses...
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