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Growth and interfacial properties of atomic layer deposited Al0.7Ti0.3Oy on Ge have been investigated as a potential high-k gate dielectric for future Ge-based metal oxide semiconductor devices. A sandwich structure of Al2O3/TiO2 stack is proposed for Al2O3/TiO2 intermixing and high-k/Ge interfacial passivation. The film thicknesses and interface microstructure are characterized by spectroscopy...
Abstract.A compact conductive polythiophene (PT) film junction was prepared by potential controlled electrochemical doping after electropolymerization of thiophene. The polythiophene film was cation-doped on one side, while its other side was anion-doped, which resulted in a polythiophene p-n junction film diode. The free-standing polythiophene film junction diode was flexible and was 1.5 times stronger...
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