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In this work, a high performance AlGaN/GaN power diode featuring MIS-gated hybrid anode (MG-HAD) with ultralow forward turn-on voltage (VT) and low reverse leakage current was experimentally demonstrated. By accurately designing the recessing depth in the MIS-gate region, a record low VT of 0.2 V for GaN power diode was obtained in the MG-HAD with 4-nm recessed-barrier-thickness. Meanwhile, the device...
A zero-bias microwave detector using an AlGaN/GaN-on-Si lateral diode featuring a recessed metal/Al2O3/III-nitride (MIS) gated hybrid anode (MG-HAD) is experimentally demonstrated. The forward turn-on voltage of the MG-HAD is determined by the threshold-voltage of the 2DEG channel beneath the recessed MIS-gate, and thus the nonlinearity of the device at zero bias can be flexibly modulated by gate...
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