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This paper reports on the electrical and thermal characterization of a state of the art SiGe ring oscillator (RO) with 2.2 ps gate delay fabricated in a Si/SiGe:C technology featuring fT and fmax of ∼300 GHz and ∼400 GHz, respectively. The transistor model is verified through DC and RF characteristics taken from the same die as the circuit measurements. Excellent agreement between measurements and...
Noise parameter (, and ) measurements of SiGe HBTs are provided for the first time in the 70–170-GHz range. In the -band, this is accomplished by integrating on a single chip a source impedance tuner with the device-under-test and a low-noise amplifier with 3.8-dB noise figure. Noise-figure measurements were performed over multiple source impedances using a commercial...
Load-pull measurements at 94 GHz are performed on last-generation SiGe HBTs, in order to understand the origins of the power constraints in the presence of millimeter-wave excitations. A very accurate HICUM model is used for the devices under test to correlate measurement results and physical phenomena. In such a way, we investigate the ionization and self-heating effects on the power limitations...
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