The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A 3-stage, 16-way PA-cell combined InP HBT solid- state power amplifier MMIC is presented demonstrating 23.2dBm (208.7mW) Pout at 210GHz to 21.0dBm (126.0mW) at 235GHz for 10dBm Pin.The total high-power bandwidth of this SSPA is between 190.8- 237GHz. The amplifier has 24.3-26.7dB S21 gain from 206-243GHz. P,DC is 5.81W. This is the first reported SSPA MMIC demonstrating > 200mW Pout above 200GHz...
We report a PLL IC for locking, at a controlled frequency offset between 1 and 20 GHz, the optical phase and optical frequency of a slave semiconductor laser to that of a reference semiconductor laser. The IC, implemented in a 500 nm InP HBT process, contains an ECL digital single-sideband mixer to provide phase-locking at a +/− 20 GHz offset frequency, and also contains a wideband phase-frequency...
We report 220 GHz Solid State Power Amplifier (SSPA) using a 250nm Indium Phosphide HBT technology. Amplifiers reported include designs having 2 and 4 power combined cells. The 4-cell amplifiers exhibited 10 dB small signal gain and 48.8 mW of output power with 4.5 dB gain at 220 GHz. These amplifiers have a 3-dB small signal bandwidth of greater than 48 GHz. A 5-µm thick BCB microstrip wiring environment...
An indium-phosphide (InP) double-heterojunction bipolar transistor (DHBT) based suite of terahertz monolithic integrated circuits (TMICs) fabricated using 256 nm InP DHBT transistors and a multipurpose three metal layer interconnect system is reported. The InP DHBT MMIC process is well suited for TMICs due to its high bandwidth (fmax = 808 GHz) and high breakdown voltage (BVCBo = 4V) and integrated...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.