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Accurate electromagnetic (EM) analysis for interconnect structures requires to consider the finite conductivity of involved conductors. The conductor loss could be accounted for through an approximate surface impedance when the skin depth of current is small. However, this approximation may not be valid for large skin depth caused by low frequencies or small conductivities. In this work, we treat...
ITRS has predicted that integrated chip (IC) packages will have interconnections with I/O pitch of 90 nm by the year 2018. Lead-based solder materials in flip chip technology will not be able to satisfy the thermal mechanical requirement these fine pitches. Of all the known interconnect technologies, nanostructure interconnects such as nanocrystalline Cu are the most promising technology to meet the...
The non-ideal nature of package level interconnects gives rise to issues such as crosstalk induced noise and simultaneous switching noise which affect the reliable operation of high performance digital systems. We examine the causes of various signal losses that occur in the package level interconnect, and with an equivalent circuit model, highlight the effects of crosstalk induced noise and detail...
In this paper, we present a cost-effective 28 nm CMOS technology for low power (LP) applications based on a high-k, single-metal-gate-first architecture. We report raw gate densities up to 4200 kGate/mm2, and, using the ARM Cortex-R4F as a reference, we report achievement of an overall 2.4x area reduction in 28 nm from 45 nm technology. Our high-density SRAM bit-cell (area= 0.120mm2) has a demonstrated...
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