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3D vertical-gate (3DVG) NAND flash is a promising candidate for next-generation high-density nonvolatile memory. Cross-layer process variation renders 3DVG NAND susceptible to decreased speeds, yield, and reliability. This can be attributed to (a) cross-layer mismatch in bitline capacitance (), (b) the need for long program cycles, and (c) sensing-margin (SM) loss induced by the effects of...
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