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By taking into account the transistor parasitic lumped elements originated from the contact pads and the metal interconnections including the top-down connection, an enhanced de-embedding procedure for on-wafer G-band measurements has been developed and implemented. This method relies on a transistor access lumped element modelling, with a special care for the top-down connection, which prove to be...
By taking into account the transistor parasitic lumped elements originated from the contact pads and the metal interconnections including the top-down connection, an enhanced de-embedding procedure for on-wafer G-band measurements has been developed and implemented. This method relies on a transistor access lumped element modelling, with a special care for the top-down connection, which prove to be...
This paper compares for the first time open-short, split-through, and TRL de-embedding techniques for on-wafer characterization of silicon active and passive devices in the DC to 170 GHz range. It is demonstrated using transformers, capacitors, 65 nm MOSFETs and SiGe HBTs that, if the open and short dummies are designed to remain lumped through 170 GHz, there is almost no difference between the three...
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