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Direct bandgap energy (Eg) and lattice deformations were investigated in β-FeSi2 epitaxial films grown by molecular beam epitaxy (MBE) with different growth condition. As Si/Fe flux ratio during the MBE growth became smaller than Si/Fe = 2.0, the lattice constants deviated from those of β-FeSi2 single crystal, which indicated an enhanced lattice deformation at the lower Si/Fe ratio. In photoreflectance...
Photoluminescence (PL) and photoreflectance (PR) properties were investigated in Si/β-FeSi2/Si(001) double heterostructure (DH) samples. The as-grown sample did not show clear PL, but the annealed one showed the 1.54μm PL. In PR spectra, the direct transition energies (Eg) were observed at 0.910–0.935 eV in the samples. The Eg shifted to lower photon energy with the increase of annealing temperature,...
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