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Wide band-gap, p-type doped, hydrogenated amorphous silicon-carbon alloy (a-Si1−xCx:H:B) layers deposited by plasma enhanced chemical vapor deposition (PECVD) under conditions that yield efficient hydrogenated amorphous silicon (a-Si:H) p-i-n solar cells have been applied as back contacts to sputter-deposited CdTe superstrate solar cells. We report a maximum observed Voc of 0.78 V and a best initial...
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