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The CuIn1−xGaxSe2 (CIGS) growth process, as well as the fundamental optical transitions, at the growth temperature of 570 °C have been studied for various x = Ga/(In+Ga) ratios. Data acquired by spectroscopic ellipsometry in real time (RTSE) were used to extract this information which was then correlated with ex situ techniques such as AFM, SEM etc. The roughness extracted from RTSE indicates that...
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