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The dielectric functions of CuIn1−xGaxSe2 (CIGS) alloys as deduced by spectroscopic ellipsometry (SE) have been parameterized versus CIGS bandgap Eg and versus x. As a result, Eg can serve as a free parameter in regression analyses of SE data acquired on multilayer structures incorporating CIGS. This enables the determination of CIGS bandgap profiles in solar cell structures with SE measurement times...
CuIn1−xGaxSe2 (CIGS) solar cells fabricated with thin absorber layers were studied by spectroscopic ellipsometry to deduce their multilayer structures, which enable quantum efficiency (QE) simulations. For all cells with thin absorbers studied here, the measured QE spectra are reduced relative to those simulated assuming 100% carrier collection in the active CIGS-containing layers. Thus, the measured...
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