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A carrier-injection-type silicon optical switch (OSW) monolithically integrated with germanium photodiodes (Ge-PDs) is proposed and operated at a wavelength of 1310 nm. The Ge-PDs used for monitoring photocurrent achieve stable switching control. A $4 \times 4$ silicon OSW, ideally a path-independent-loss type, was fabricated on a silicon-on-insulator substrate. Measured loss variations of all 16...
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