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In article number 1901772, Jong‐Hyun Ahn and co‐workers demonstrate the use of ultrathin Al2O3 layer as a selective‐surface dopant for the fabrication of complementary metal‐oxide‐semiconductor (CMOS) inverter on single MoTe2 crystal. This surface doping approach can offer a realistic path for the realization of 2D transition‐metal‐dichalcogenide based efficient and ultrafast electronic‐units with...
To realize basic electronic units such as complementary metal‐oxide‐semiconductor (CMOS) inverters and other logic circuits, the selective and controllable fabrication of p‐ and n‐type transistors with a low Schottky barrier height is highly desirable. Herein, an efficient and nondestructive technique of electron‐charge transfer doping by depositing a thin Al2O3 layer on chemical vapor deposition...
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