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In this letter, magnesium–titanium oxide (MTO) thin films were prepared through a solution-processing method. Variation of permittivity, leakage properties, and optical bandgap of the MTO thin films with different Ti content were investigated. The amorphous indium–zinc oxide thin-film transistors (TFTs) using ${\rm Mg}_{0.6}{\rm Ti}_{0.4}{\rm O}$ as gate dielectric exhibited a small subthreshold...
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