The Infona portal uses cookies, i.e. strings of text saved by a browser on the user's device. The portal can access those files and use them to remember the user's data, such as their chosen settings (screen view, interface language, etc.), or their login data. By using the Infona portal the user accepts automatic saving and using this information for portal operation purposes. More information on the subject can be found in the Privacy Policy and Terms of Service. By closing this window the user confirms that they have read the information on cookie usage, and they accept the privacy policy and the way cookies are used by the portal. You can change the cookie settings in your browser.
A high power Y : Y/Δ three-phase Dual Active Bridge (DAB) topology offers higher power density, smaller switching stress, smaller volume of magnetics and smaller DC capacitor over single phase DAB. Therefore this topology is suitable for medium voltage (MV) applications. The high-frequency DAB currents are nearly sinusoidal suited for D-Q transformation which enables fast average mode current control...
Three-phase Dual Active Bridge (DAB) Y : Y/Δ composite topology offers advantage of nearly sinusoidal converter-currents without pulse-width modulation, which can be utilized for D-Q mode control implementation. D-Q control is smooth and regulates power-factor of DAB which ensures zero voltage switching (ZVS) operation of the DAB converter at wide-range loading conditions. A practical DAB high-frequency...
A comparative evaluation of three different three-phase Dual Active Bridge (DAB) topologies with a 15-kV Si-IGBT based three-level converter at the high-voltage side and 1200-V SiC-MOSFET based converters in three different arrangements at the low-voltage side are compared. The proposed DABs are an integral part of a solid state transformer which connects a 13.8-kV distribution grid and a 480-V utility...
A new Dual Active Bridge (DAB) topology is proposed with a 15-kV SiC-IGBT based three-level inverter at the high-voltage side and 1200-V SiC-MOSFET based paralleled two-level inverter at the low-voltage side. The proposed DAB is an integral part of a solid state transformer which connects a 13.8-kV distribution grid and a 480-V utility grid. The three-level inverter connected at the high-voltage side...
Set the date range to filter the displayed results. You can set a starting date, ending date or both. You can enter the dates manually or choose them from the calendar.