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The dislocation stress memorization technique (D-SMT) stressor is demonstrated to boost the device performance on the Si three-dimensional (3-D) FinFET device. The larger channel stress and mobility enhancement ratio are observed in the narrower gate width device, due to the effect of triple crystal re-growth directions on the 3-D FinFET device. In this paper, ∼33% mobility enhancement and ∼23% Id,sat...
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